| 1. | Irradiation effect and preservation of ginkgo seeds
银杏种子辐照效应及其保鲜的初步研究 |
| 2. | Irradiation effect of neutrons on a - sic : h films
薄膜的中子辐照研究 |
| 3. | Experimental study on proton irradiation effects of floating gate roms
器件的质子辐射效应实验研究 |
| 4. | The ionization irradiation effects were researched on very large scale integrated circuits ( vlsi ) made with cmos technique under the neutron and - ray synthetical irradiation environment of a reactor
摘要研究了反应堆中子和射线综合辐照环境下cmos工艺大规模集成电路的电离辐照效应。 |
| 5. | Through the experiments of the synthetical irradiation effects on different 80c196kc20 and psd501b1 scm ( single chip microprocessor ) system chips , it was found that the static current did not increase apparently
通过对80c196kc20和psd501b1两种不同芯片在该环境下开展综合辐照试验，发现总的静态电流增长不明显。 |
| 6. | The stimulation of the he - ne laser irradiation effect on the vigor was clearer than the growth potential of germination and germination capacity . it indicated that the stimulation effect was expressed in early phase clearly
激光对uv - b处理后小麦幼苗发芽势、发芽率的促进作用大于生长势，说明这种促进作用在萌发早期表现的较为明显。 |
| 7. | Heavy ion irradiation of 80 mev 12c or 85 mev 19f is used to simulate the proton and neutron irradiation of the beam window materials for ads . the irradiation effects are examined by the positron annihilation lifetime technique
在ads散裂中子源束窗材料辐照效应研究中，使用80mev的~ ( 12 ) c或85mev ~ ( 19 ) f离子模拟中子及质子辐照在束窗材料中产生的辐照损伤。 |
| 8. | The studies on optical properties and irradiation effect of heavy ion implanted samples are very important from both theoretical and applied view points . in this work , the optical properties and defect structures in xe + - implanted ysz and ni + - implanted al2o3 were studied by using optical spectroscopy , tem , xps and trim 96 calculation . it was found that 1 ) a broad absorption band centered at 522 nm was observed in 1 1016 cm - 2 xe + - implanted ysz
离子注入是一种重要的表面改性技术， ysz ( yttria - stabilizedcubiczirconia )和- al _ 2o _ 3是两种性能优良的陶瓷，前者是目前发现的最抗辐照的绝缘体，而后者则是抗辐照最差的绝缘体材料之一，研究重离子注入对其光学性能的影响并以此研究辐照效应，有重要的理论意义和应用价值。 |
| 9. | In respect of sic devices , an analytical model of 6h - sic jfet to well match the experimental results is proposed . the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal , mobility degradation and space charge density decrease
对sicjfet的电参数如电子浓度，迁移率，电阻率和空间电荷区密度在中子辐照下的变化进行了分析，提出了中子辐照下6h - sicjfet的器件模型，利用此模型对sicjfet在室温和300时的辐照响应进行模拟的结果和实验值相符。 |
| 10. | For the application of sic devices to radiation fields , it is important to know the irradiation effects and characteristics of sic materials and devices . the main contributions in this thesis are as following : temperature - and electric field - dependent electron transport in 6h - s1c is studied by single - particle monte carlo technique . the physical model used in the simulation is developed considering the main scattering mechanisms in details
为了能充分发挥sic抗辐照的优势和潜力，本文首先对sic区别于常规半导体的特性作了系统的研究：用单粒子montecarlo方法研究了6h - sic的电子输运规律，模拟的结果体现了6h - sic具有良好的高温和高场特性以及迁移率的各项异性，其横向迁移率和纵向迁移率相差近5倍。 |
